Optical and electrical properties of InP porous structures formed on P-N substrates

Author

Okazaki, Hiroyuki ; Sato, Taketomo ; Yoshizawa, Naoki ; Hashizume, Tamotsu

Author_Institution

Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

We demonstrated to form InP porous structures on n-type epitaxial layers grown on p-type (001) substrates. The high-density array of straight pores with 150nm diameter and 5000nm depth was formed by the electrochemical anodization process, where the pore depth could be controlled by the anodization time in the n-type layer. The present p-n InP porous structures show the low optical reflectance in UV-, visible- and near-infrared region. The current transport properties clearly show the rectifying behavior. These features are very promising for practical application to high-efficiency photo-sensitive devices.

Keywords

III-V semiconductors; anodisation; electrochemistry; indium compounds; infrared spectra; porous semiconductors; reflectivity; semiconductor epitaxial layers; semiconductor growth; ultraviolet spectra; visible spectra; InP; UV-infrared region; current transport properties; electrical properties; electrochemical anodization; high-density array; high-efficiency photo-sensitive devices; n-type epitaxial layers; near-infrared region; optical properties; optical reflectance; p-n substrates; p-type (001) substrates; pore depth; porous structures; rectifying property; visible-infrared region; Electrochemical processes; Electrodes; Epitaxial layers; Indium phosphide; Optoelectronic devices; Photonic crystals; Reflectivity; Semiconductor nanostructures; Substrates; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5515942

Filename

5515942