• DocumentCode
    3110487
  • Title

    Selfconsistent model for pseudomorphic MOSFETs

  • Author

    Carroll, Roger ; Anwar, A.M.

  • Author_Institution
    United Technol. Res. Center, East Hartford, CT, USA
  • fYear
    1990
  • fDate
    30 Sep-3 Oct 1990
  • Firstpage
    486
  • Abstract
    A self-consistent charge control and current-voltage (I V) characteristics are presented for a pseudomorphic MODFET (AlGaAs/InGaAs/AlGaAs). Poisson´s and Schrodinger´s equations are solved self-consistently to calculate the areal charge distribution n s in the quantum well (QW). For simplicity, the QW formed in InGaAs is approximated by three straight lines. The gate voltage dependence of the two-dimensional electron gas gives the charged control expression
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor quantum wells; solid-state microwave devices; AlGaAs; AlGaAs/InGaAs/AlGaAs; InGaAs; Poisson equation; Schrodinger equation; areal charge distribution; charged control; current-voltage characteristics; pseudomorphic MODFET; quantum well; self-consistent model; two-dimensional electron gas; Effective mass; Electrons; Gallium arsenide; Indium gallium arsenide; MODFETs; MOSFETs; Potential energy; Predictive models; Schrodinger equation; Shape;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Military Communications Conference, 1990. MILCOM '90, Conference Record, A New Era. 1990 IEEE
  • Conference_Location
    Monterey, CA
  • Type

    conf

  • DOI
    10.1109/MILCOM.1990.117466
  • Filename
    117466
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3110487