400 GHz FMAX InP/GaAsSb HBT for millimeter-wave applications

Author

Nodjiadjim, V. ; Riet, M. ; Scavennec, A. ; Berdaguer, P. ; Piotrowicz, S. ; Jardel, O. ; Godin, J. ; Bove, P. ; Lijadi, M.

Author_Institution

III-V Lab., Alcatel-Thales III-V Lab., Marcoussis, France

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

This paper presents multi-finger InP/GaAsSb/InP HBTs designed for millimeter-wave applications. The 0.7×10 μm² emitter size 4- and 8- finger devices demonstrated f_T and f_max above 200 GHz and 400 GHz respectively, a current gain of 28 and an emitter breakdown voltage of 7V. We also report on the performances of a 2-stage power amplifier based on more conservative devices (1×15 μm² two-emitter finger). This circuit delivers an output power above 15 dBm at 60 GHz.

Keywords

III-V semiconductors; arsenic compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; millimetre wave power amplifiers; submillimetre wave transistors; InP-GaAsSb; emitter breakdown voltage; frequency 400 GHz; frequency 60 GHz; millimeter-wave applications; multifinger HBTs; power amplifier; voltage 7 V; Fingers; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; Integrated circuit interconnections; Millimeter wave technology; Power amplifiers; Synthetic aperture sonar; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5515954

Filename

5515954