Title :
400 GHz FMAX InP/GaAsSb HBT for millimeter-wave applications
Author :
Nodjiadjim, V. ; Riet, M. ; Scavennec, A. ; Berdaguer, P. ; Piotrowicz, S. ; Jardel, O. ; Godin, J. ; Bove, P. ; Lijadi, M.
Author_Institution :
III-V Lab., Alcatel-Thales III-V Lab., Marcoussis, France
fDate :
May 31 2010-June 4 2010
Abstract :
This paper presents multi-finger InP/GaAsSb/InP HBTs designed for millimeter-wave applications. The 0.7×10 μm2 emitter size 4- and 8- finger devices demonstrated fT and fmax above 200 GHz and 400 GHz respectively, a current gain of 28 and an emitter breakdown voltage of 7V. We also report on the performances of a 2-stage power amplifier based on more conservative devices (1×15 μm2 two-emitter finger). This circuit delivers an output power above 15 dBm at 60 GHz.
Keywords :
III-V semiconductors; arsenic compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; millimetre wave power amplifiers; submillimetre wave transistors; InP-GaAsSb; emitter breakdown voltage; frequency 400 GHz; frequency 60 GHz; millimeter-wave applications; multifinger HBTs; power amplifier; voltage 7 V; Fingers; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; Integrated circuit interconnections; Millimeter wave technology; Power amplifiers; Synthetic aperture sonar; Thermal resistance; Voltage;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5515954
