Title :
A 2 W, 62% PAE, small chip size HBT MMIC for 3 V PCN applications
Author :
Mueller, J.-E. ; Baureis, P. ; Berger, O. ; Boettner, T. ; Bovolon, N. ; Packeiser, G. ; Zwicknagl, P.
Author_Institution :
Siemens Corp. Res. & Dev., Munich, Germany
Abstract :
A 62% power added efficiency (PAE) AlGaAs-GaAs HBT MMIC power amplifier with a very small chip size of 1.2 mm/sup 2/ for use in PCN applications (1800 MHz) is described. Maximum output power is 2 W at only a single voltage supply of 3 V. The linear gain of the two-stage MMIC is 33 dB. To our knowledge this is the best combination of power performance data for wireless applications demonstrated so far for a MMIC. The chip size is more than a factor of four smaller than comparable MMICs known before. The MMIC offers the potential both for low cost production due to small chip size, single voltage supply and high performance at the same time.
Keywords :
III-V semiconductors; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; aluminium compounds; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; mobile radio; personal communication networks; 1800 MHz; 2 W; 3 V; 33 dB; 62 percent; AlGaAs-GaAs; AlGaAs-GaAs HBT; HBT MMIC power amplifier; PCN applications; power added efficiency; power performance; single voltage supply; two-stage MMIC; wireless applications; Costs; Heterojunction bipolar transistors; MESFETs; MMICs; Personal communication networks; Power amplifiers; Power generation; Production; Switches; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628282
