Linearity characterization of nano-scale underlap SOI MOSFETs

Author

Singh, Indra Vijay ; Alam, Md Shamsul

Author_Institution

Dept. of Electron. Eng., Aligarh Muslim Univ., Aligarh, India

fYear

2013

fDate

13-15 Dec. 2013

Firstpage

1

Lastpage

5

Abstract

This work presents the linearity characterization by varying the process parameters of new underlap Silicon-on-Insulator (SOI) MOSFETs (with high-k stack on spacer) in single gate (SG) and double gate (DG) configurations. Using linearity defined in-terms of third order intercept (IP3), the paper presents guideline for optimum value of spacer “s”, film thickness “T_si”and doping gradient “d” to maximize the linearity of new underlap design. Based on a new Figure-of-Merit (FoM) involving intrinsic gain A_v, IP3, maximum oscillation frequency f_MAX and dc power consumption P_DC, it has been found that FoM in DG configuration is almost three times higher than that of SG design. This is due to a combination of higher value of f_MAX, A_v and IP3 in DG configuration with power consumption of ~ 2.1 mW. The higher value of FoM in DG device has been achieved at similar “on” to “off” current ratio (I_on/I_off) as specified in current International Technology Road map for Semiconductors (ITRS).

Keywords

MOSFET; high-k dielectric thin films; semiconductor doping; silicon-on-insulator; ITRS; International Technology Road map for Semiconductors; Si; dc power consumption; doping gradient; double gate configurations; figure-of-merit; film thickness; high-k stack; intrinsic gain; linearity characterization; nanoscale underlap SOI MOSFET; oscillation frequency; process parameters; silicon-on-insulator; single gate configurations; spacer; third order intercept; Doping; Films; Linearity; Logic gates; MOSFET; Performance evaluation; Radio frequency; Double Gate; Low Power; Non-Linearity; Silicon-on-Insulator; Underlap design;

fLanguage

English

Publisher

ieee

Conference_Titel

India Conference (INDICON), 2013 Annual IEEE

Conference_Location

Mumbai

Print_ISBN

978-1-4799-2274-1

Type

conf

DOI

10.1109/INDCON.2013.6726009

Filename

6726009