• DocumentCode
    3110747
  • Title

    Active simultaneous harmonic source and load pull assisted by local polyharmonic distortion models

  • Author

    Leoni, Robert E., III ; Harris, Scott A. ; Ries, David G.

  • Author_Institution
    Integrated Defense Syst., Raytheon Co., Andover, MA, USA
  • fYear
    2010
  • fDate
    23-28 May 2010
  • Firstpage
    1166
  • Lastpage
    1169
  • Abstract
    The efficiency of a power amplifier is a strong function of the core transistor technology and the circuitry that is wrapped around it. There are many theoretical approaches to obtaining full DC-to-RF conversion from an ideal transistor, however real-world technologies do not perform equally well with each. The parasitic reactances and non-ideal DC characteristics of a transistor technology result in matching and bias requirements that can deviate significantly from those of ideal theory. In this paper we describe the use of an active simultaneous source and load pull system that quickly ascertains the conditions required to achieve a transistor technology´s peak efficiency performance. The speed with which the system is able to achieve these results is facilitated by local polyharmonic distortion models that provide a quick and reliable method for finding the path of steepest ascent.
  • Keywords
    harmonic distortion; power amplifiers; power transistors; DC-to-RF conversion; active simultaneous harmonic source; core transistor technology; load pull; nonideal DC characteristic; parasitic reactance; polyharmonic distortion model; power amplifier; Distortion measurement; Harmonic distortion; Impedance; Particle measurements; Phase measurement; Power amplifiers; Power measurement; Power system harmonics; Power system modeling; Voltage; Behavioral modeling; high efficiency power amplifiers; large-signal measurement; nonlinear systems; polyharmonic distortion models; transistor characterization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
  • Conference_Location
    Anaheim, CA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-6056-4
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2010.5515961
  • Filename
    5515961