Title :
Electrical properties of MIS-structures and Schottky barriers of Si/GaAs (001) interface
Author :
Aksenov, Maxim S. ; Preobrazhensky, Valery V. ; Putyato, Mikhail A. ; Semyagin, Boris R. ; Valisheva, Natalya A. ; Tereshchenko, Oleg E.
Author_Institution :
Novosibirsk State Univ., Novosibirsk, Russia
fDate :
June 30 2011-July 4 2011
Abstract :
Parameters of Schottky barrier diodes (SBD), such as the ideality factor (n), series resistance (Rs) and the effective barrier height (φBn), were obtained from I-V and C-V measurements of Al/Si/GaAs and Al/GaAs heterostructures at room temperature. For SBD with a Si interlayer grown by molecule beam epitaxy the following parameters were found: n = 1.29, φI-V = 0.74eV and Rs = 120Ω as compared to the sample without interlayer (1.7-7.5, 0.8eV and 500Ω, respectively). The electronic properties of Si/GaAs(001) interface were determined from C-V and G-V measurements of Al/SiO2/GaAs (001) MIS structure. It is shown that formation of Si/GaAs(001) interface allows reducing the density of surface states to ~(1-5)·1011 cm-2 eV-1 for Au/SiO2/GaAs (001) MIS structure.
Keywords :
III-V semiconductors; MIS structures; Schottky barriers; Schottky diodes; aluminium; gallium arsenide; molecular beam epitaxial growth; silicon; silicon compounds; surface states; Al-SiO2-GaAs; GaAs-Si; MIS-structures; Schottky barrier diodes; density of surface states; effective barrier height; ideality factor; molecule beam epitaxy; series resistance; temperature 293 K to 298 K; Gallium arsenide; Gold; Schottky barriers; Silicon; Surface resistance; Temperature; GaAs; surface passivation; surface states;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-61284-793-1
DOI :
10.1109/EDM.2011.6006879
