Title :
Copper Germanium alloys formation by low temperature atomic hydrogen treatment
Author :
Kazimirov, Artyom I. ; Erofeev, Evgeny V. ; Kagadei, Valery A.
Author_Institution :
Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk, Russia
fDate :
June 30 2011-July 4 2011
Abstract :
The behavior of the two-layer thin-film Cu/Ge system deposited on i-GaAs substrate at treatment in atomic hydrogen was investigated. It was found that such processing in an atomic hydrogen flow with density 1015 at. cm2 s-1 at room temperature for 5 min leads to the solid state interdiffusion of Cu and Ge thin films and poly-crystalline CuGe alloy formation with the vertically oriented grains.
Keywords :
chemical interdiffusion; copper alloys; germanium alloys; liquid phase deposition; metallic thin films; CuGe; GaAs; copper germanium alloys; low temperature atomic hydrogen treatment; polycrystalline alloy; solid state interdiffusion; temperature 293 K to 298 K; time 5 min; two-layer thin-film system; vertically oriented grains; Annealing; Copper; Films; Gallium arsenide; Resistance; Surface treatment; Thin films; atomic hydrogen; copper germanium alloy; diffusion; sheet resistance;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-61284-793-1
DOI :
10.1109/EDM.2011.6006889
