Effect of magnetic field on injection currents in PbSnTe:In films

Author

Klimov, Alexander E. ; Shumsky, Vladimir N. ; Epov, Vladimir S. ; Kidyarov, Boris I.

Author_Institution

A.V. Rzhanov Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia

fYear

2011

fDate

June 30 2011-July 4 2011

Firstpage

45

Lastpage

49

Abstract

In the present paper, we consider the influence of magnetic fields B ≤ 2 T on the electric current in thin PbSnTe:In films, kept at T=4.2 K, with prevailing injection of charge carriers out of contacts and space-charge-controlled limitation of the current. Data for various orientations of the field B with respect to the direction of the current in the film plane, and also data on transient currents, are reported. The data obtained are analyzed within the theory of space-charge-limited electric currents and with due regard for ferroelectric properties of PbSnTe:In.

Keywords

ferroelectric semiconductors; indium; lead compounds; magnetic field effects; narrow band gap semiconductors; semiconductor thin films; space-charge-limited conduction; tin compounds; PbSnTe:In; ferroelectric properties; film plane; injection currents; magnetic field effect; space-charge-limited electric currents; transient currents; Charge carriers; Current; Current measurement; Dielectrics; Films; Magnetic field measurement; Magnetic fields; PbSnTe:In; injection current; limitation by space charge; magnetic field; traps;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on

Conference_Location

Erlagol, Altai

Print_ISBN

978-1-61284-793-1

Type

conf

DOI

10.1109/EDM.2011.6006890

Filename

6006890