Title :
The influence of low-temperature annealing on properties of heterostructures p-HgCdTe grown by molecular-beam epitaxy
Author :
Kombarov, Denis V. ; Protasov, Dmitry Yu ; Kostyuchenko, Vladimir Ya
Author_Institution :
Siberian State Geodetic Acad., Novosibirsk, Russia
fDate :
June 30 2011-July 4 2011
Abstract :
In heterostructures p-HgCdTe changes of density and mobility of major carriers, mobility and lifetime of minor carriers were investigated after some contacts with water and annealing at 80°C. The obtained dependencies for samples from various heterostructures have a strong difference. For some heterostructures the density of major carriers and lifetime of minor carriers sharply increased after such treatments.
Keywords :
II-VI semiconductors; annealing; cadmium compounds; carrier density; carrier lifetime; carrier mobility; mercury compounds; minority carriers; molecular beam epitaxial growth; semiconductor heterojunctions; HgCdTe; carrier density; carrier lifetime; carrier mobility; heterostructures; low-temperature annealing; major carriers; minor carriers; molecular beam epitaxial growth; temperature 80 degC; Annealing; Charge carrier processes; Fitting; Magnetic fields; Physics; Radiative recombination; Mercury-cadmium telluride; hydrogenation; low-temperature annealing;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-61284-793-1
DOI :
10.1109/EDM.2011.6006891
