Title :
A 77 GHz T/R MMIC chip set for automotive radar systems
Author :
Kamozaki, K. ; Kurita, N. ; Hioe, W. ; Tanimoto, T. ; Ohta, H. ; Nakamura, T. ; Kondoh, H.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
A 77-GHz MMIC chip set consisting of a low noise amplifier, a power amplifier, a down converter and a voltage controlled oscillator has been developed to constitute a T/R module for automotive radar systems. The low noise amplifier exhibited a gain of 9.5 dB/spl plusmn/1.0 dB over a 62-96.5 GHz band with an NF of 5.8 dB. The power amplifier achieved a small-signal gain of 13.5 dB/spl plusmn/2.5 dB from 70.7 GHz to 80.3 GHz with 9.7 dBm output power at the 1 dB gain compression. The down converter exhibited a conversion gain of 1.3 dB/spl plusmn/2.2 dB in a band between 75 GHz and 98 GHz with an NF of 7.5 dB. The 77-GHz voltage controlled oscillator exhibited an output power of 0.9 dBm/spl plusmn/0.9 dB over a tuning range of 75.5-76.6 GHz. A design philosophy has been adopted of achieving broadband performance in small MMIC chip size in order to improve manufacturability and performance/cost characteristics of the chip set. The total area for the chip set is 7.92 mm/sup 2/.
Keywords :
HEMT integrated circuits; MMIC amplifiers; MMIC frequency convertors; MMIC oscillators; MMIC power amplifiers; automotive electronics; circuit tuning; field effect MIMIC; millimetre wave amplifiers; millimetre wave frequency convertors; millimetre wave oscillators; power amplifiers; radar equipment; voltage-controlled oscillators; wideband amplifiers; 1.3 to 13.5 dB; 5.8 dB; 62 to 98 GHz; 7.5 dB; 77 GHz; EHF; GaAs; LNA; MM-wave chip set; P-HEMT technology; T/R MMIC chip set; T/R module; VCO; automotive radar systems; broadband performance; down converter; low noise amplifier; power amplifier; pseudomorphic HEMT process; transmit/receive module; tuning range; voltage controlled oscillator; Automotive engineering; Gain; Low-noise amplifiers; MMICs; Noise measurement; Power amplifiers; Power generation; Radar; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628285
