• DocumentCode
    3111186
  • Title

    Investigation of SiOx layer annealing process using Monte Carlo simulation

  • Author

    Mikhantiev, Eugene A. ; Karpov, Alexander N. ; Usenkov, Stanislav V. ; Shwartz, Natalia L.

  • Author_Institution
    Novosibirsk State Tech. Univ., Novosibirsk, Russia
  • fYear
    2011
  • fDate
    June 30 2011-July 4 2011
  • Firstpage
    68
  • Lastpage
    72
  • Abstract
    Simulation of silicon nanocluster formation in SiOx and SiO2-SiO-SiO2 layers after high temperature annealing was carried out. Cluster size distribution depending on temperature and annealing time was obtained. The process of Si 3D island formation during silicon deposition on silicon dioxide substrate was examined. Simulation demonstrated the role of SiO molecule in Si-nc aggregation.
  • Keywords
    Monte Carlo methods; annealing; silicon compounds; 3D island formation; Monte Carlo simulation; SiO2-SiO-SiO2; SiOx; high temperature annealing; layer annealing process; silicon deposition; silicon dioxide substrate; silicon nanocluster formation; Annealing; Films; Lattices; Monte Carlo methods; Silicon; Silicon compounds; Substrates; Monte Carlo simulation; Si; SiOx; nanoclusters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
  • Conference_Location
    Erlagol, Altai
  • Print_ISBN
    978-1-61284-793-1
  • Type

    conf

  • DOI
    10.1109/EDM.2011.6006897
  • Filename
    6006897
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3111186