• DocumentCode
    3111353
  • Title

    Analysis of memory property on the memristor based on the current and constant of integration

  • Author

    Gang Bao ; Shen, Yi ; Zeng, Zhigang

  • Author_Institution
    Dept. of Control Sci. & Eng., Huazhong Univ. of Sci. & & Technol., Wuhan, China
  • fYear
    2011
  • fDate
    26-28 March 2011
  • Firstpage
    1151
  • Lastpage
    1154
  • Abstract
    Memristor has received significant attentions since Strukov et al released their invention on April 30, 2008 at Nature Letters. Based on the model of Strukov et al, analytic expression of the internal state is obtained by applying voltage to the device. By using the constant in the expression of the internal state, memory property of the memristor is explained.
  • Keywords
    memristors; internal state; memory property; memristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information Science and Technology (ICIST), 2011 International Conference on
  • Conference_Location
    Nanjing
  • Print_ISBN
    978-1-4244-9440-8
  • Type

    conf

  • DOI
    10.1109/ICIST.2011.5765174
  • Filename
    5765174
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3111353