A 206–294GHz 3-stage amplifier in 35nm InP mHEMT, using a thin-film microstrip environment

Author

Griffith, Zach ; Ha, Wonill ; Chen, Peter ; Kim, Dae-Hyun ; Brar, Bobby

Author_Institution

Teledyne Sci. Co., Thousand Oaks, CA, USA

fYear

2010

fDate

23-28 May 2010

Firstpage

57

Lastpage

60

Abstract

We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 206-294 GHz, formed by common-source configured 35 nm L_g InP mHEMTs and a multi-layer thin-film microstrip (TFM) wiring environment. The amplifier S₂₁ mid-band gain is 11-16 dB, 3 dB bandwidth at 294 GHz, and 82.5 mW P_DC. This is the first reported InP HEMT MMIC operating in G-, H-band employing thin-film microstrip. Because the TFM ground-plane shields the signal interconnects from the substrate, well behaved device (0.1-67, 140-200, 210-310 GHz) and amplifier (206-320 GHz) measurements are presented from an unthinned, 25 mil substrate. The total size of this 3-stage amplifier is only 0.77 × 0.40 mm².

Keywords

III-V semiconductors; MMIC amplifiers; high electron mobility transistors; indium compounds; microstrip components; 3-stage amplifier; InP; frequency 206 GHz to 294 GHz; high electron mobility transistor; mHEMT; millimeter-wave monolithic integrated circuit amplifier; size 35 nm; thin-film microstrip environment; Frequency; Indium phosphide; MIMICs; MMICs; Microstrip; Substrates; Thin film circuits; Transistors; Wiring; mHEMTs; E-mode transistor; InP metamorphic high electron mobility transistor (InP mHEMT); MMIC; low-loss dielectric layer; millimeter Wave; multiple interconnect layers; thin-film microstrip;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5515989

Filename

5515989