Title :
A 206–294GHz 3-stage amplifier in 35nm InP mHEMT, using a thin-film microstrip environment
Author :
Griffith, Zach ; Ha, Wonill ; Chen, Peter ; Kim, Dae-Hyun ; Brar, Bobby
Author_Institution :
Teledyne Sci. Co., Thousand Oaks, CA, USA
Abstract :
We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 206-294 GHz, formed by common-source configured 35 nm Lg InP mHEMTs and a multi-layer thin-film microstrip (TFM) wiring environment. The amplifier S21 mid-band gain is 11-16 dB, 3 dB bandwidth at 294 GHz, and 82.5 mW PDC. This is the first reported InP HEMT MMIC operating in G-, H-band employing thin-film microstrip. Because the TFM ground-plane shields the signal interconnects from the substrate, well behaved device (0.1-67, 140-200, 210-310 GHz) and amplifier (206-320 GHz) measurements are presented from an unthinned, 25 mil substrate. The total size of this 3-stage amplifier is only 0.77 × 0.40 mm2.
Keywords :
III-V semiconductors; MMIC amplifiers; high electron mobility transistors; indium compounds; microstrip components; 3-stage amplifier; InP; frequency 206 GHz to 294 GHz; high electron mobility transistor; mHEMT; millimeter-wave monolithic integrated circuit amplifier; size 35 nm; thin-film microstrip environment; Frequency; Indium phosphide; MIMICs; MMICs; Microstrip; Substrates; Thin film circuits; Transistors; Wiring; mHEMTs; E-mode transistor; InP metamorphic high electron mobility transistor (InP mHEMT); MMIC; low-loss dielectric layer; millimeter Wave; multiple interconnect layers; thin-film microstrip;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5515989
