A 1.4 watt Q-band GaAs PHEMT MMIC

Author

Nash, S.J. ; Platzker, A. ; Wohlert, R. ; Liss, C.

Author_Institution

Raytheon Micro-Electron. Div., Andover, MA, USA

fYear

1997

fDate

12-15 Oct. 1997

Firstpage

283

Lastpage

286

Abstract

A Q-band three-stage monolithic GaAs PHEMT amplifier with an output power of 1.4 W from 42 to 45 GHz has been developed. Power added efficiency between 14 and 18% with an associated gain of 12.5 dB was measured when biased at Vds=6.0 V and Idsq=1000 mA. When biased at Vds=5.0 V, Idsq=1000 mA this amplifier has demonstrated over 1.1 W of output power with an associated gain of 11.5 to 12.5 dB from 41 to 46 GHz. Similar performances were also measured when the design was transferred from 2 mil thick 3 inch diameter pilot process line to the 2 mil thick, 4 inch diameter manufacturing process line.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MIMIC; gallium arsenide; 1.1 to 1.4 W; 11.5 to 12.5 dB; 14 to 18 percent; 41 to 46 GHz; EHF; GaAs; GaAs PHEMT MMIC; MIMIC; Q-band; monolithic HEMT amplifier; three-stage amplifier; Gain measurement; Gallium arsenide; MMICs; Manufacturing processes; PHEMTs; Performance evaluation; Power amplifiers; Power generation; Power measurement; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual

Conference_Location

Anaheim, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-4083-3

Type

conf

DOI

10.1109/GAAS.1997.628287

Filename

628287