Title :
Bolometer at semiconductor-metal phase transition in VO2 thin films
Author :
Aliev, Vladimir Sh ; Bortnikov, Sergey G.
Author_Institution :
A.V. Rzhanov Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
fDate :
June 30 2011-July 4 2011
Abstract :
A double ion beam sputtering deposition method was used for fabricating bolometric structure based on poly-crystalline VO2 film. A sensitivity of bolometric structure to infrared (IR) radiation at semiconductor-metal phase transition (SMPT) was observed. It has been established that temperature coefficient of resistance (TCR) in phase transition region is 10 times higher of such value at room temperature and resistance of bolometric structure is 25 times lower.
Keywords :
bolometers; phase transformations; radiation effects; semiconductor device manufacture; semiconductor thin films; vanadium compounds; bolometer; double ion beam sputtering deposition method; infrared radiation; phase transition region; polycrystalline VO2 film; semiconductor metal phase transition; temperature 293 K to 298 K; temperature coefficient of resistance; Bolometers; Films; Heating; Hysteresis; Resistance; Temperature measurement; Temperature sensors; VO2 thin films; bolometer; infrared radiation; phase transition semiconductor-metal;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-61284-793-1
DOI :
10.1109/EDM.2011.6006913
