Model of effect of pn-junction magnetic field modulation

Author

Kozlov, Anton V. ; Cheremisinov, Andrey A. ; Polomoshnov, Sergey A. ; Tikhonov, Robert D. ; Shamanaev, Sergey V.

Author_Institution

Nat. Res. Univ. MIET, Moscow, Russia

fYear

2011

fDate

June 30 2011-July 4 2011

Firstpage

137

Lastpage

139

Abstract

The article considers distribution of flows of charge carriers in operating conditions of dual-collector bipolar magnetotransistor. The proposed mechanism of distribution of charge carriers clears up occurrence of an inverse target signal of the transistor with a constant direction of a magnetic field. The model for flowing of electron-hole plasma along the pn-junction well-substrate in a magnetic field with induction B on two sides from the emitter is presented.

Keywords

bipolar transistors; magnetic fields; magnetoresistive devices; p-n junctions; semiconductor device models; solid-state plasma; PN-junction magnetic field modulation effect; charge carriers; dual-collector bipolar magnetotransistor; electron-hole plasma; magnetic field; pn-junction well-substrate; Electric fields; Junctions; Magnetic fields; Magnetic tunneling; Modulation; Sensitivity; Substrates; Lateral magnetotransistor; design and process simulation; relative current magnetosensitivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on

Conference_Location

Erlagol, Altai

Print_ISBN

978-1-61284-793-1

Type

conf

DOI

10.1109/EDM.2011.6006915

Filename

6006915