DocumentCode :
3111595
Title :
Gamma radiation response for SOI MOSFETs fabricated on DeleCut and Unibond wafers
Author :
Kulubaeva, Elza G. ; Naumova, Olga V. ; Ilnitsky, Michael A. ; Popov, Vladimir P.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
fYear :
2011
fDate :
June 30 2011-July 4 2011
Firstpage :
140
Lastpage :
142
Abstract :
The gamma radiation tolerance of silicon on insulator technology on Dele-Cut and Unibond materials was studied. The radiation response is characterized by threshold-voltage shifts of the back-gate n-channel SOI MOSFETs. The density of the effective positively charge accumulated in buried oxide after γ-irradiation at dose 1 Mrad was found to be 1.3·1012 cm-2 and 2.1·1012 cm-2 for Dele-Cut and Unibond wafers, respectively.
Keywords :
MOSFET; gamma-rays; silicon-on-insulator; γ-irradiation; DeleCut wafers; SOI MOSFET; back-gate n-channel SOI MOSFET; gamma radiation response; silicon on insulator technology; threshold-voltage shifts; unibond wafers; Logic gates; MOSFETs; Physics; Radiation effects; Silicon; Silicon on insulator technology; Threshold voltage; Dele-Cut; SOI MOSFET; Unibond; buried oxide; charge accumulation; gamma irradiation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-61284-793-1
Type :
conf
DOI :
10.1109/EDM.2011.6006916
Filename :
6006916
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3111595
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