Room temperature picosecond mode-locked pulse generation from a 1.55µm VECSEL with an InGaAsN/GaAsN fast saturable absorber mirror

Author

Khadour, A. ; Bouchoule, S. ; Decobert, J. ; Harmand, J.C. ; Oudar, J.L.

Author_Institution

CORIA, Rouen, France

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

3

Abstract

A 1.55μm VECSEL with a metal-GaAs/AlAs hybrid metamorphic mirror optimized for high power room temperature operation has been assembled with a fast saturable absorber mirror (SESAM) in a four-mirror cavity to generate mode-locked pulses at a frequency of 2 GHz. Stable pulses are obtained at room temperature avoiding the need for water cooling, with a pulsewidth <; 2 ps and an average optical power at the output coupling mirror of 10 mW. The RF linewidth of the free running laser has been measured to be less than 1000 Hz.

Keywords

III-V semiconductors; gallium compounds; indium compounds; laser mirrors; laser mode locking; optical pulse generation; optical saturable absorption; surface emitting lasers; InGaAsN-GaAsN; RF linewidth; SESAM; VECSEL; four mirror cavity; hybrid metamorphic mirror; picosecond mode locked pulse generation; power 10 mW; semiconductor saturable absorber mirror; temperature 293 K to 298 K; wavelength 1.55 mum; Assembly; Cooling; Frequency; Hybrid power systems; Mirrors; Optical pulse generation; Optical pulses; Power generation; Pulse generation; Temperature; Bragg Mirror; Passive mode-locking; Saturable absorber; Thermal Optimization; VECSEL;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5515998

Filename

5515998