Title :
Power consumption reduction for configuration SRAM of field programmable gate arrays
Author :
Matyushin, Denis V. ; Kurganskii, Sergei I.
Author_Institution :
Eng. & Design Center Electron., Joint Stock Co., Voronezh, Russia
fDate :
June 30 2011-July 4 2011
Abstract :
This article describes a method of reducing power consumption for configuration SRAM cells. Modification of the SRAM cell is performed taking into account special characteristics of FPGA configuration memory. Characteristics of the cells are summarized.
Keywords :
SRAM chips; field programmable gate arrays; FPGA configuration memory; SRAM cells; field programmable gate arrays; power consumption reduction; Field programmable gate arrays; Inverters; Leakage current; Noise; Random access memory; Threshold voltage; Transistors; FPGA; Leakage current; asymmetric SRAM;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-61284-793-1
DOI :
10.1109/EDM.2011.6006917
