Title :
Sub 50 nm InP HEMT with fT = 586 GHz and amplifier circuit gain at 390 GHz for sub-millimeter wave applications
Author :
Lai, R. ; Mei, X.B. ; Sarkozy, S. ; Yoshida, W. ; Liu, P.H. ; Lee, J. ; Lange, M. ; Radisic, V. ; Leong, K. ; Deal, W.
Author_Institution :
Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA
fDate :
May 31 2010-June 4 2010
Abstract :
In this paper, we report recent advances on sub-50 nm InP HEMT have achieved new benchmarks of 586 GHz fT and 7 dB amplifier circuit gain at 390 GHz.
Keywords :
high electron mobility transistors; submillimetre wave amplifiers; HEMT; InP; frequency 390 GHz; frequency 586 GHz; gain 7 dB; size 50 nm; submillimeter wave applications; Epitaxial growth; Fingers; Frequency; Gain; HEMTs; Indium phosphide; Probes; Scattering parameters; Semiconductor process modeling; Submillimeter wave integrated circuits;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516002
