Title :
Analysis of certain methods for determining contact resistivity
Author :
Smirnov, Ivan A. ; Kalinin, Sergey V.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
fDate :
June 30 2011-July 4 2011
Abstract :
Different options for determining contact resistivity using TLM method are analyzed in the paper. The analysis is carried out on the example of two simplified test structures. The first structure corresponds to the case when the resistance of metal contact equals zero, and the sheet resistance of semiconductor under the contact depends on the technology of contact formation. Contacts with buffer layer of silicide located between metal and silicon substrate are analyzed on the example of the second structure.
Keywords :
electrical resistivity; elemental semiconductors; ohmic contacts; semiconductor-metal boundaries; silicon; silicon compounds; transmission line theory; Si; TLM method; buffer layer; contact resistivity; metal contact resistance; semiconductor resistance; silicon substrate; test structures; Conductivity; Electrical resistance measurement; Immune system; Metals; Resistance; Silicon; Transmission line measurements; TLM; contact resistivity;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-61284-793-1
DOI :
10.1109/EDM.2011.6006923
