Title :
Development of self-aligned T-gate pHEMT technology
Author :
Fedosova, Maria A. ; Gavrilova, Anastasia M. ; Erofeev, Evgeny V. ; Arykov, Vadim S.
Author_Institution :
Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk, Russia
fDate :
June 30 2011-July 4 2011
Abstract :
Self-aligned 0.25 μm T-gate pHEMT technology was described in this paper. Basic requirements of the self-aligned technology for gate profile were presented. Metallization system and annealing parameters providing low resistance ohmic contacts were chosen. Current-voltage characteristics, capacity-voltage characteristics and current gain of routine and self-aligned pHEMT were compared. The self-aligned technology provides an increase in transconductance S and drive current Ids of 10...15% comparing with routine process. Cutoff frequency increased by 15 GHz and reached Ft ~70 GHz.
Keywords :
high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; ohmic contacts; semiconductor device metallisation; annealing parameters; capacity-voltage characteristics; current-voltage characteristics; gate profile; low resistance ohmic contacts; metallization system; self-aligned T-gate pHEMT technology; size 0.25 mum; Annealing; Control systems; Gallium arsenide; Logic gates; Metallization; Ohmic contacts; PHEMTs; Self-aligned gate; electron beam lithography; ohmic contacts; pHEMT;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-61284-793-1
DOI :
10.1109/EDM.2011.6006924
