DocumentCode
3111802
Title
Use of self-aligned technology in GaAs scotty diode fabrication
Author
Yunusov, Igor V. ; Gavrilova, Anastasiya M. ; Arykov, Vadim S.
Author_Institution
Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk, Russia
fYear
2011
fDate
June 30 2011-July 4 2011
Firstpage
168
Lastpage
170
Abstract
The self-aligned technology of vertical diode fabrication is considered. The essential feature of the used technology is applying of the self-alignment principle in etching of base mesa and formation of ohmic contact. The experimental results show that the self-aligned technology allows to reduce series resistance and reverse leakage current and also to improve the ideality factor in comparison with similar diodes produced with use of standard technology.
Keywords
III-V semiconductors; Schottky diodes; etching; gallium arsenide; leakage currents; ohmic contacts; GaAs; base mesa etching; ohmic contact; reverse leakage current; self-aligned technology; series resistance reduction; vertical Scotty diode fabrication; Control systems; Fabrication; Gallium arsenide; Metals; Resistance; Schottky diodes; Diode; electrical parameters; self-aligned;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
Conference_Location
Erlagol, Altai
Print_ISBN
978-1-61284-793-1
Type
conf
DOI
10.1109/EDM.2011.6006925
Filename
6006925
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