Title :
High performance InP mHEMTs on GaAs substrate with multiple interconnect layers
Author :
Ha, Wonill ; Griffith, Zach ; Kim, Dae-Hyun ; Chen, Peter ; Urteaga, Miguel ; Brar, Bobby
Author_Institution :
Teledyne Sci. & Imaging Co., Thousand Oaks, CA, USA
fDate :
May 31 2010-June 4 2010
Abstract :
We report the development of high performance metamorphic InP high electron mobility transistors (mHEMTs) with InAs composite channel design and three interconnect metal layers suitable for advanced RF and mixed signal integrated circuits. An un-passivated 35 nm Lg device showed RF figures-of-merit of 533 GHz fτ and 343 GHz fmax. After full circuit processing, encapsulated in BCB, a 35 nm Lg, 2 × 20um Wg mHEMT showed 387 GHz fτ, 580 GHz fmax. Four-inch wafer mapping shows excellent device uniformity and yield. We also report a broadband (206-294 GHz) 3-stage G-, H-band common-source amplifier having a nominal S21 mid-band gain of 11-16 dB employing thin-film microstrip wiring.
Keywords :
III-V semiconductors; MMIC amplifiers; electron beam lithography; gallium arsenide; high electron mobility transistors; indium compounds; interconnections; G-band common-source amplifier; H-band common-source amplifier; InP-GaAs; RF figures-of-merit; RF integrated circuits; composite channel design; device uniformity; electron beam lithography; encapsulation; frequency 206 GHz to 294 GHz; frequency 343 GHz; frequency 387 GHz; frequency 533 GHz; gain 11 dB to 16 dB; high performance metamorphic high electron mobility transistors; mHEMTs; mixed signal integrated circuits; multiple interconnect layers; nominal S21 midband gain; size 35 nm; thin-film microstrip wiring; unpassivated un-passivated; wafer mapping; Gallium arsenide; HEMTs; Indium phosphide; Integrated circuit interconnections; MODFETs; Mixed analog digital integrated circuits; Radio frequency; Signal design; Substrates; mHEMTs; D-mode transistor; E-mode transistor; InP high electron mobility transistor; feedback amplifier; metamorphic low loss dielectric layer; mutiple interconnect layer;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516006
