DocumentCode :
3111922
Title :
High frequency performance of vertical InAs nanowire MOSFET
Author :
Lind, Erik ; Egard, Mikael ; Johansson, Sofia ; Johansson, Anne-Charlotte ; Borg, B. Mattias ; Thelander, C. ; Persson, Karl-Magnus ; Dey, Anil W. ; Wernersson, Lars-Erik
Author_Institution :
Solid State Phys., Lund Univ., Lund, Sweden
fYear :
2010
fDate :
May 31 2010-June 4 2010
Firstpage :
1
Lastpage :
4
Abstract :
We report on RF characterization of vertical, 100-nm-gate length InAs nanowire MOSFETs, utilizing wrap-gate technology and Al2O3 high-K gate oxide. The transistors show ft=5.6 GHz and fmax=22 GHz, mainly limited by parasitic capacitances. The RF device performance is described using a hybrid-π model taking hole generation at the drain into account. Electrostatic modeling of the parasitic capacitances for arrays of vertical nanowires indicates that a strong reduction in extrinsic capacitances can be achieved for devices with a small inter-wire separation.
Keywords :
III-V semiconductors; MOSFET; alumina; arrays; capacitance; dielectric materials; electrostatics; high-k dielectric thin films; indium compounds; microwave field effect transistors; nanowires; semiconductor device models; semiconductor quantum wires; InAs-Al2O3; RF transistors; electrostatic modeling; extrinsic capacitance; high frequency performance; high-K gate oxide; hole generation; hybrid-π model; parasitic capacitance; size 100 nm; vertical InAs nanowire MOSFET; vertical nanowire arrays; wrap-gate technology; Frequency; MOSFET circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
ISSN :
1092-8669
Print_ISBN :
978-1-4244-5919-3
Type :
conf
DOI :
10.1109/ICIPRM.2010.5516010
Filename :
5516010
Link To Document :
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