Title :
Nanotechnologies in development of solar cells
Author :
Neizvestny, Igor G.
Author_Institution :
A.V. Rzhanov Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
fDate :
June 30 2011-July 4 2011
Abstract :
The article presents one of the ways to improve characteristics of silicon solar cells - replacement of planar p-n junctions by array of nanowires (nanorods, nanowhiskers) located perpendicular to the substrate.
Keywords :
nanoelectronics; nanowires; p-n junctions; silicon; solar cells; Si; nanotechnology; nanowires; planar p-n junctions; silicon; solar cells; Arrays; Charge carriers; Nanowires; P-n junctions; Photovoltaic cells; Silicon; Substrates; Solar cells; nanowires array; p-n junction;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-61284-793-1
DOI :
10.1109/EDM.2011.6006934
