• DocumentCode
    3112000
  • Title

    Nanotechnologies in development of solar cells

  • Author

    Neizvestny, Igor G.

  • Author_Institution
    A.V. Rzhanov Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
  • fYear
    2011
  • fDate
    June 30 2011-July 4 2011
  • Firstpage
    313
  • Lastpage
    313
  • Abstract
    The article presents one of the ways to improve characteristics of silicon solar cells - replacement of planar p-n junctions by array of nanowires (nanorods, nanowhiskers) located perpendicular to the substrate.
  • Keywords
    nanoelectronics; nanowires; p-n junctions; silicon; solar cells; Si; nanotechnology; nanowires; planar p-n junctions; silicon; solar cells; Arrays; Charge carriers; Nanowires; P-n junctions; Photovoltaic cells; Silicon; Substrates; Solar cells; nanowires array; p-n junction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
  • Conference_Location
    Erlagol, Altai
  • Print_ISBN
    978-1-61284-793-1
  • Type

    conf

  • DOI
    10.1109/EDM.2011.6006934
  • Filename
    6006934
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3112000