• DocumentCode
    3112142
  • Title

    Concurrent Enhancement of Q and Power Handling in Multi-Tether High-Order Extensional Resonators

  • Author

    Shahmohammadi, M. ; Harrington, Brandon P. ; Abdolvand, Reza

  • Author_Institution
    Oklahoma State University, Tulsa, United States
  • fYear
    2010
  • fDate
    23-28 May 2010
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    In this paper we demonstrate that quality factor (Q) and power handling, two inherently divergent characteristics of a resonator, can be improved simultaneously by designing high-order harmonic resonant structures anchored with multiple tethers. We show that in thin-film piezoelectric-on-substrate (TPoS) resonators, the quality factor is significantly altered by varying the resonator´s thickness, but the resonator´s power handling is often traded off for the higher Q. Q´s measured from TPoS resonators fabricated on a 30µm thick silicon substrate are up to 3 times higher than the values measured for devices on 20µm thick substrate while maximum deliverable power (at the bifurcation point) to the same device is reduced from 2.5dBm to −0.3dBm. In contrast, it is observed that the maximum deliverable power in a multi-tether ∼1GHz resonator is enhanced by more than 5dBm compared to an identical single-pair tethered resonator (7dBm versus 1.9dBm) and the Q is also increased by 55%.
  • Keywords
    Piezoelectric films; Power measurement; Power system harmonics; Q factor; Q measurement; Resonance; Semiconductor thin films; Substrates; Thickness measurement; Thin film devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
  • Conference_Location
    Anaheim, CA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-6056-4
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2010.5516022
  • Filename
    5516022