DocumentCode
3112142
Title
Concurrent Enhancement of Q and Power Handling in Multi-Tether High-Order Extensional Resonators
Author
Shahmohammadi, M. ; Harrington, Brandon P. ; Abdolvand, Reza
Author_Institution
Oklahoma State University, Tulsa, United States
fYear
2010
fDate
23-28 May 2010
Firstpage
1
Lastpage
1
Abstract
In this paper we demonstrate that quality factor (Q) and power handling, two inherently divergent characteristics of a resonator, can be improved simultaneously by designing high-order harmonic resonant structures anchored with multiple tethers. We show that in thin-film piezoelectric-on-substrate (TPoS) resonators, the quality factor is significantly altered by varying the resonator´s thickness, but the resonator´s power handling is often traded off for the higher Q. Q´s measured from TPoS resonators fabricated on a 30µm thick silicon substrate are up to 3 times higher than the values measured for devices on 20µm thick substrate while maximum deliverable power (at the bifurcation point) to the same device is reduced from 2.5dBm to −0.3dBm. In contrast, it is observed that the maximum deliverable power in a multi-tether ∼1GHz resonator is enhanced by more than 5dBm compared to an identical single-pair tethered resonator (7dBm versus 1.9dBm) and the Q is also increased by 55%.
Keywords
Piezoelectric films; Power measurement; Power system harmonics; Q factor; Q measurement; Resonance; Semiconductor thin films; Substrates; Thickness measurement; Thin film devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5516022
Filename
5516022
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