DocumentCode
3112205
Title
Bias dependence of phonon behaviors in the InGaN/GaN multiple quantum well with multiquantum barriers
Author
Liang, Yu-Ting ; Chen, Yu-Fang ; Fang, Chia-Hui ; Wang, Jen-Cheng ; Nee, Tzer-En ; Wu, Gwo-mei
Author_Institution
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear
2009
fDate
13-17 July 2009
Firstpage
1
Lastpage
2
Abstract
To elucidate the unique correlations between the electrical and optical characteristics of InGaN/GaN MQW LEDs, it is necessary to examine the radiative recombinations of carriers confined from aspects of the phonon trainsitions.
Keywords
III-V semiconductors; gallium compounds; indium compounds; phonons; quantum wells; wide band gap semiconductors; InGaN-GaN; LED; bias dependence; carriers radiative recombination; multiple quantum well; multiquantum barriers; phonon trainsitions; Acoustic waves; Energy measurement; Gallium nitride; Light emitting diodes; Optical scattering; Phonons; Quantum well devices; Raman scattering; Temperature dependence; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-4102-0
Electronic_ISBN
978-1-4244-4103-7
Type
conf
DOI
10.1109/OECC.2009.5214419
Filename
5214419
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