Title :
Bias dependence of phonon behaviors in the InGaN/GaN multiple quantum well with multiquantum barriers
Author :
Liang, Yu-Ting ; Chen, Yu-Fang ; Fang, Chia-Hui ; Wang, Jen-Cheng ; Nee, Tzer-En ; Wu, Gwo-mei
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
To elucidate the unique correlations between the electrical and optical characteristics of InGaN/GaN MQW LEDs, it is necessary to examine the radiative recombinations of carriers confined from aspects of the phonon trainsitions.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; phonons; quantum wells; wide band gap semiconductors; InGaN-GaN; LED; bias dependence; carriers radiative recombination; multiple quantum well; multiquantum barriers; phonon trainsitions; Acoustic waves; Energy measurement; Gallium nitride; Light emitting diodes; Optical scattering; Phonons; Quantum well devices; Raman scattering; Temperature dependence; Tunneling;
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
DOI :
10.1109/OECC.2009.5214419
