Optimization of short channel effect by arsenic P-halo implant through polysilicon gate for 0.12 um P-MOSFET

Author

Chou, J.W. ; Hong, Gary ; Lin, Kevin C. ; Cheng, Y.C. ; Chen, C. ; Chang, C.Y.

Author_Institution

Specialty Technol. Div., United Microelectron. Corp., Hsin-Chu, Taiwan

fYear

2000

fDate

2000

Firstpage

28

Lastpage

31

Abstract

Excellent PMOS short channel behavior is achieved with a high energy, large tilt angle arsenic P-halo implant. It was found that the tail profile of arsenic P-halo was implanted through the polysilicon gate; therefore, the channel concentration is modulated not only laterally from the gate edge but also vertically from the top of the polysilicon gate and it resulted in a very flat short channel behavior. The effect of the arsenic P-halo implant was comprehensively studied and well characterized to explain this specific phenomenon. The gate oxide integrity was examined by Q_BD at different P-halo implants. Excellent performance of the 0.12 μm PMOSFET is also demonstrated in this work

Keywords

MOSFET; arsenic; ion implantation; semiconductor device breakdown; semiconductor device models; 0.12 micron; P-MOSFET; PMOS short channel behavior; PMOSFET; Q_BD; Si:As; arsenic P-halo implant; arsenic P-halo tail profile; channel concentration modulation; flat short channel behavior; gate oxide integrity; polysilicon gate; short channel effect optimization; Capacitance; Design for quality; Doping profiles; Implants; MOSFET circuits; Microelectronics; Power engineering and energy; Tail; Threshold voltage; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924082

Filename

924082