Title :
Simulation of the small-signal performance of a HEMT using a distributed model
Author :
Martin-Guerrero, Teresa M. ; Camacho-Peñalosa, C.
Author_Institution :
Dept. de Ingenieria de Comunicaciones, Malaga Univ., Spain
Abstract :
A distributed model developed for MESFETs is applied to the simulation of the small-signal behaviour of a HEMT in the 1-50 GHz frequency range. The model has been used to simulate the behaviour of the HEMT for a wide variety of bias conditions in order to investigate their influence on the elements of the distributed model. The results obtained suggest that the bias dependence of the HEMT distributed model elements is more complicated than that of MESFET devices
Keywords :
high electron mobility transistors; microwave field effect transistors; semiconductor device models; 1 to 50 GHz; HEMT; bias dependence; distributed model; simulation; small-signal performance; Admittance; Circuit simulation; Equivalent circuits; Fitting; HEMTs; MESFETs; Magnetic devices; Roentgenium; Scattering parameters; Virtual manufacturing;
Conference_Titel :
Electrotechnical Conference, 1996. MELECON '96., 8th Mediterranean
Conference_Location :
Bari
Print_ISBN :
0-7803-3109-5
DOI :
10.1109/MELCON.1996.551603
