Title :
Indium beam implantation
Author :
Fujisawa, Hiroshi ; Yamashita, Takatoshi ; lshida, S. ; Hamamoto, Nariaki ; Miyamoto, Naoki ; Miyabayashi, Kenji ; Nagayama, Tsutomu
Author_Institution :
Dept. of Eng. & Production, Nissin Ion Equip. Co. Ltd., Kyoto, Japan
Abstract :
Indium ion beam is generated in various ways and examined for implantation in a medium current ion implanter. The properties of both solid and gaseous source materials are tested to meet the needs for production use in ion implanter. The evaluation includes metal and energy contamination on wafer and the lifetime of an ion source and etc. We have found the methods of an indium implantation in our medium current machine inclusive of common ion dopants
Keywords :
VLSI; indium; ion implantation; semiconductor doping; In beam implantation; energy contamination; ion source lifetime; medium current ion implanter; medium current machine; Argon; Indium; Ion beams; Ion sources; Materials testing; Production; Research and development; Solids; Temperature control; Voltage;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924090
