DocumentCode
3112414
Title
Indium beam implantation
Author
Fujisawa, Hiroshi ; Yamashita, Takatoshi ; lshida, S. ; Hamamoto, Nariaki ; Miyamoto, Naoki ; Miyabayashi, Kenji ; Nagayama, Tsutomu
Author_Institution
Dept. of Eng. & Production, Nissin Ion Equip. Co. Ltd., Kyoto, Japan
fYear
2000
fDate
2000
Firstpage
62
Lastpage
65
Abstract
Indium ion beam is generated in various ways and examined for implantation in a medium current ion implanter. The properties of both solid and gaseous source materials are tested to meet the needs for production use in ion implanter. The evaluation includes metal and energy contamination on wafer and the lifetime of an ion source and etc. We have found the methods of an indium implantation in our medium current machine inclusive of common ion dopants
Keywords
VLSI; indium; ion implantation; semiconductor doping; In beam implantation; energy contamination; ion source lifetime; medium current ion implanter; medium current machine; Argon; Indium; Ion beams; Ion sources; Materials testing; Production; Research and development; Solids; Temperature control; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology, 2000. Conference on
Conference_Location
Alpbach
Print_ISBN
0-7803-6462-7
Type
conf
DOI
10.1109/.2000.924090
Filename
924090
Link To Document