Title :
Ion beam induced strain relaxation in pseudomorphous epitaxial SiGe layers
Author :
Vyarkin, A.F. ; Avrutin, V.S. ; Izyumskaya, N.F. ; Egorov, V.K. ; Starkov, V.V. ; Zinenko, V.I. ; Smirnova, I.A. ; Hemment, P.L.F. ; Nejim, A. ; Vdovin, V.I. ; Yugova, T.G.
Author_Institution :
Inst. of Microelectron. Technol., Acad. of Sci., Chernogolovka, Russia
Abstract :
The effects of irradiation with Ge+ and Ar+ ions at elevated temperatures on the relaxation behavior of pseudomorphic Si0.79Ge0.21/Si heterostructures have been compared. It was found the strain relaxation in the structures implanted with Ge+ at 400°C started already upon implantation, post-implantation thermal annealing of this sample resulted in considerably higher degree of relaxation than that in control (non-implanted) samples as well as in samples implanted with Ar + both at 230 and 4000°C and with Ge+ at 230°C. This result points to a dramatic influence of both the implantation temperature and ion species on relaxation behavior of the ion-irradiated heterostructure. Two possible mechanisms for this effect are discussed
Keywords :
Ge-Si alloys; annealing; ion implantation; semiconductor doping; semiconductor epitaxial layers; stress relaxation; 230 C; 400 C; SiGe; ion beam induced strain relaxation; post-implantation thermal annealing; pseudomorphous epitaxial SiGe layers; relaxation behavior; strain relaxation; Argon; Capacitive sensors; Chemicals; Germanium silicon alloys; Ion beams; Microelectronics; Molecular beam epitaxial growth; Silicon germanium; Temperature; X-ray diffraction;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924092
