Ion beam induced strain relaxation in pseudomorphous epitaxial SiGe layers

Author

Vyarkin, A.F. ; Avrutin, V.S. ; Izyumskaya, N.F. ; Egorov, V.K. ; Starkov, V.V. ; Zinenko, V.I. ; Smirnova, I.A. ; Hemment, P.L.F. ; Nejim, A. ; Vdovin, V.I. ; Yugova, T.G.

Author_Institution

Inst. of Microelectron. Technol., Acad. of Sci., Chernogolovka, Russia

fYear

2000

fDate

2000

Firstpage

70

Lastpage

72

Abstract

The effects of irradiation with Ge⁺ and Ar⁺ ions at elevated temperatures on the relaxation behavior of pseudomorphic Si_0.79Ge_0.21/Si heterostructures have been compared. It was found the strain relaxation in the structures implanted with Ge⁺ at 400°C started already upon implantation, post-implantation thermal annealing of this sample resulted in considerably higher degree of relaxation than that in control (non-implanted) samples as well as in samples implanted with Ar ⁺ both at 230 and 4000°C and with Ge⁺ at 230°C. This result points to a dramatic influence of both the implantation temperature and ion species on relaxation behavior of the ion-irradiated heterostructure. Two possible mechanisms for this effect are discussed

Keywords

Ge-Si alloys; annealing; ion implantation; semiconductor doping; semiconductor epitaxial layers; stress relaxation; 230 C; 400 C; SiGe; ion beam induced strain relaxation; post-implantation thermal annealing; pseudomorphous epitaxial SiGe layers; relaxation behavior; strain relaxation; Argon; Capacitive sensors; Chemicals; Germanium silicon alloys; Ion beams; Microelectronics; Molecular beam epitaxial growth; Silicon germanium; Temperature; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924092

Filename

924092