Title :
Investigation of the origin of InAs dot formation at the growth interrupted AlGaInAs hetero-interface grown by MOVPE
Author :
Nagira, Takashi ; Ono, Kenichi ; Takemi, Masayoshi
Author_Institution :
High Freq. & Opt. Device Works, Mitsubishi Electr. Corp., Itami, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
In the growth of AlGaInAs/InP material system by metal organic vapor phase epitaxy (MOVPE), there are many hillocks on the wafer in some growth conditions. We analyzed the hillocks by TEM and EDX and found that the origin of the hillocks is InAs dots on growth interrupted interface. In addition, we investigated the growth condition dependence of hillock distribution in details, and revealed the origin and the mechanism of the formation of InAs dots.
Keywords :
III-V semiconductors; MOCVD; X-ray chemical analysis; aluminium compounds; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; semiconductor quantum dots; transmission electron microscopy; vapour phase epitaxial growth; AlGaInAs-InP; EDX; InAs; MOVPE; TEM; dot formation; growth conditions; growth interrupted heterointerface; hillock distribution; metal organic vapor phase epitaxy; wafer; Buffer layers; Conducting materials; Epitaxial growth; Epitaxial layers; Indium phosphide; Morphology; Optical devices; Optical materials; Substrates; Temperature;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516035
