DocumentCode
3112506
Title
Soft error improvement in SRAMs by ion implanted shallow well structure
Author
Arita, Y. ; Takai, M. ; Ogawa, I. ; Kishimoto, T. ; Sonoda, K. ; Tsutsumi, K.
Author_Institution
Graduate Sch. of Eng. Sci., Osaka Univ., Japan
fYear
2000
fDate
2000
Firstpage
81
Lastpage
82
Abstract
Sensibility to alpha particle and neutron-induced soft errors in SRAM was reduced by an ion implanted shallow well structure. The amount of charges collected to a storage node and the sensibility to soft error were reduced by 30-50% and 70-80%, respectively, by reducing a well depth from 2.0 μm to 13 μm
Keywords
SRAM chips; alpha-particle effects; ion implantation; neutron effects; semiconductor doping; 2.0 to 1.3 mum; SRAMs; ion implanted shallow well structure; neutron-induced soft errors; soft error improvement; storage node; Alpha particles; CMOS technology; Impurities; Ion implantation; Materials science and technology; Neutrons; Protection; Radioactive materials; Random access memory; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology, 2000. Conference on
Conference_Location
Alpbach
Print_ISBN
0-7803-6462-7
Type
conf
DOI
10.1109/.2000.924095
Filename
924095
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