Title :
MOVPE growth of InPN films on InP(001) substrates
Author :
Seki, Yuki ; Wang, Yanzhe ; Thieu, Quang Tu ; Kuboya, Shigeyuki ; Sanorpim, Sakuntam ; Onabe, Kentaro
Author_Institution :
Dept. of Adv. Mater. Sci., Univ. of Tokyo, Kashiwa, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
Dilute-nitride alloy InPN films have been grown by metalorganic vapor phase epitaxy (MOVPE), and the N incorporation behavior is investigated by varying the major growth parameters. The grown-surface morphologies show that the 2-dimensional (2D) growth with atomically flat surfaces is obtained at 460-500°C with relatively high P supplies. The XRD analyses show that the N incorporation increases for lower growth temperatures and higher N/P ratios, and the N concentration up to 0.18% has been attained. The 150-170 nm-thick InPN films are coherently grown on InP(001) without lattice relaxation.
Keywords :
III-V semiconductors; MOCVD; X-ray diffraction; indium compounds; phosphorus compounds; semiconductor epitaxial layers; semiconductor growth; surface morphology; vapour phase epitaxial growth; wide band gap semiconductors; InP; InP (001) substrates; InPN; MOVPE growth; XRD analyses; atomically flat surfaces; dilute-nitride alloy films; grown-surface morphologies; growth parameters; metalorganic vapor phase epitaxy; nitrogen incorporation behavior; size 150 nm to 170 nm; temperature 460 degC to 500 degC; two-dimensional growth; Atomic force microscopy; Atomic layer deposition; Epitaxial growth; Epitaxial layers; Indium phosphide; Inductors; Lattices; Scanning electron microscopy; Surface morphology; X-ray scattering;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516039
