Title :
Distribution of ion implanted dopants in gallium nitride
Author :
Wenzel, A. ; Karl, Holger ; Chang Liu
Author_Institution :
Inst. fur Phys., Augsburg Univ.
Abstract :
Wurtzitic gallium nitride (GaN) films were implanted with mainly Mg but also with Si, C, and O ions under different conditions (energy, dose, implantation angle, ion-charge state). The resulting depth distributions were analyzed by secondary ion mass spectroscopy (SIMS). The implantation depth profiles and the damage profiles, investigated by Rutherford backscattering-spectroscopy/channeling, are in good agreement with Monte-Carlo simulations. Mg-implantation in the [0001]-channeling direction of GaN resulted in a doubling of the mean projected range of the ions. In addition, the SIMS-detection limit for the different elements was determined
Keywords :
III-V semiconductors; Monte Carlo methods; Rutherford backscattering; carbon; channelling; doping profiles; energy loss of particles; gallium compounds; ion implantation; magnesium; oxygen; secondary ion mass spectra; semiconductor thin films; silicon; wide band gap semiconductors; C; GaN films; GaN:Mg,Si,C,O; Mg; Monte-Carlo simulation; O; Rutherford backscattering-spectroscopy/channeling; SIMS; SIMS-detection limit; Si; [0001]-channeling direction; damage profiles; depth distributions; dose; energy; gallium nitride; implantation angle; implantation depth profiles; ion implanted dopants; ion-charge state; mean projected range; secondary ion mass spectroscopy; wurtzite gallium nitride; Backscatter; Doping; Gallium nitride; III-V semiconductor materials; Ion implantation; Mass spectroscopy; Molecular beam epitaxial growth; Pollution measurement; Semiconductor films; Temperature;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924100
