Study of electrical properties of poly-3-alkylthiophen (P3AT) derivatives P3HT, P3BT and P3DDT based field effect transistors

Author

Tiwari, Sunita ; Tiwari, Sunita ; Prakash, R. ; Balasubramanian, S.K.

Author_Institution

Dept. of Electron. Eng., IIT (BHU), Varanasi, India

fYear

2013

fDate

13-15 Dec. 2013

Firstpage

1

Lastpage

4

Abstract

Top contact organic thin-film field effect transistors based on regioregular poly(3-butylthiophene-2,5-diyl) (P3BT), poly(3-dodecylthiophene-2,5-diyl) (P3DDT) and poly(3-hexylthiophene-2,5-diyl) (P3HT) of similar concentration were fabricated by spin coating technique. The current-voltage (I-V) characteristics of these three different polymer based organic field-effect transistors (OFETs) were studied. The device performance parameters for each kind of OFET were estimated with the help of measured electrical characteristics and performance were compared to optimize the best polymer for FETs amongst these three polymers.

Keywords

carrier mobility; conducting polymers; field effect transistors; organic semiconductors; spin coating; OFET; electrical properties; organic thin film field effect transistors; poly-3-alkylthiophen derivatives; polymer based organic field effect transistors; spin coating technique; Coatings; Current measurement; Films; OFETs; Performance evaluation; Polymers; OFETs; conducting polymers; poly-3-alkylthiophen (P3AT); spin coating;

fLanguage

English

Publisher

ieee

Conference_Titel

India Conference (INDICON), 2013 Annual IEEE

Conference_Location

Mumbai

Print_ISBN

978-1-4799-2274-1

Type

conf

DOI

10.1109/INDCON.2013.6726094

Filename

6726094