Title :
The threshold voltage property research and structure design of MOSFET with stack-gate
Author :
Zhao, Yang ; Meng, Jian ; Ke, Daoming
Author_Institution :
Sch. of Electron. & Inf., Anhui Univ., Hefei, China
Abstract :
A structure design of MOSFET with stack-gate is proposed in this paper, and the correctness of the normal NMOS threshold voltage through comparing the theoretical calculations and simulation results is tested and verified. Then, the MOSFET with stack-gate threshold voltage in different Channels is also simulated. The most obvious difference between stack-gate MOSFEL and single-gate MOSFET is the gate structure, which will inevitably cause changes in gate capacitance. And the gate capacitance is also analyzed in this paper.
Keywords :
MOSFET; semiconductor device models; gate capacitance; gate structure; normal NMOS threshold voltage; single-gate MOSFET; stack-gate MOSFEL; structure design; threshold voltage property research; Capacitance; Doping; Logic gates; MOS devices; MOSFET circuits; Periodic structures; Threshold voltage;
Conference_Titel :
Information Science and Technology (ICIST), 2011 International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-9440-8
DOI :
10.1109/ICIST.2011.5765237
