Energetics of interstitial defects and TED in ultra low energy implants

Author

Colombeau, B. ; Cristiano, F. ; Assayag, G. Ben ; Altibelli, A. ; Claverie, Alain

Author_Institution

CEMES, CNRS, Toulouse, France

fYear

2000

fDate

2000

Firstpage

107

Lastpage

110

Abstract

In this paper, we discuss the mechanisms by which small clusters evolve through “magic” sizes into {113} defects and then, at sufficiently high dose levels, transform into dislocation loops of two types. This ripening process is mediated by the interchange of free Si interstitial atoms between different extended defects, leading to a decrease of their formation energy. A detailed analysis of extrinsic defect energetics has been carried out and it is shown that Ostwald ripening is the key concept for understanding and simulating extrinsic defect kinetics and thus predict transient enhanced diffusion evolution in particular for the Ultra Low Energy implants

Keywords

diffusion; dislocation loops; elemental semiconductors; extended defects; interstitials; ion implantation; segregation; silicon; Ostwald ripening; Si; TED; dislocation loops; energetics; extended defects; extrinsic defect energetics; extrinsic defect kinetics; formation energy; free Si interstitial atoms; high dose levels; interstitial defects; magic sizes; ripening process; small clusters; transient enhanced diffusion; ultra low energy implants; {113} defects; Analytical models; Annealing; Fabrication; Implants; Kinetic theory; Page description languages; Predictive models; Silicon; Transient analysis; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924102

Filename

924102