Selective area growth of InP on nano-patterned SiO2/Si(100) substrates by molecular beam epitaxy

We have investigated the selective area growth of InP on nano-patterned Si substrates with SiO₂ mask by molecular beam epitaxy. By optimizing the growth conditions, the growth of one separate InP single crystallite for each Si opening has been accomplished. It is found that when single crystallites coalesced into larger grains beyond Si openings, lattice strains were introduced in the grains because of the difference in thermal expansion coefficient between Si and InP. This clearly shows that the growth of one InP single crystallite for each Si opening is indispensable for growing stress- and defect-free InP regions on SiO₂ towards the application to next generation MOSFETs as the channel materials.