Title :
Selective area growth of InP on nano-patterned SiO2/Si(100) substrates by molecular beam epitaxy
Author :
Hasegawa, S. ; Yamano, A. ; Ahn, N.S. ; Cha, N.G. ; Kanki, T. ; Tanaka, H. ; Asahi, H.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Ibaraki, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
We have investigated the selective area growth of InP on nano-patterned Si substrates with SiO2 mask by molecular beam epitaxy. By optimizing the growth conditions, the growth of one separate InP single crystallite for each Si opening has been accomplished. It is found that when single crystallites coalesced into larger grains beyond Si openings, lattice strains were introduced in the grains because of the difference in thermal expansion coefficient between Si and InP. This clearly shows that the growth of one InP single crystallite for each Si opening is indispensable for growing stress- and defect-free InP regions on SiO2 towards the application to next generation MOSFETs as the channel materials.
Keywords :
III-V semiconductors; crystallites; indium compounds; internal stresses; lattice constants; molecular beam epitaxial growth; nanopatterning; photolithography; semiconductor epitaxial layers; semiconductor growth; silicon; silicon compounds; thermal expansion; (100) substrates; InP; MOSFETs application; Si; SiO2; channel materials; defect-free regions; grains; growing stress-free; growth conditions; lattice strains; molecular beam epitaxy; nanopatterned substrates; photolithography; selective area growth; single crystallite; thermal expansion coefficient; Capacitive sensors; Crystalline materials; Crystallization; III-V semiconductor materials; Indium phosphide; Lattices; Molecular beam epitaxial growth; Substrates; Thermal expansion; Wet etching;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516047
