Title :
Comparative analysis of parameters of deep levels in the ion implanted layers and fast electron-irradiated structures
Author :
Yurchuk, S.Y. ; Kol´tsov, G.I. ; Didenko, S.I.
Author_Institution :
Steel & Alloys Inst., Moscow, Russia
Abstract :
Deep-level transient-spectroscopy (DLTS) techniques have been used to investigate of parameters the deep levels in ion implanted and electron irradiated semiconductor compounds AIIIBV. The comparative analysis of parameters of deep levels in the ion implanted layers and electron-irradiated structures are presented in this paper
Keywords :
III-V semiconductors; deep level transient spectroscopy; deep levels; defect states; electron beam effects; impurity states; ion implantation; AIIIBV; DLTS; deep levels; deep-level transient-spectroscopy; electron-irradiated structures; fast electron-irradiated structures; ion implanted layers; semiconductor compounds; Annealing; Electrons; Energy capture; Gallium arsenide; Indium phosphide; Ion implantation; Ionization; P-n junctions; Schottky barriers; Steel;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924107
