Ion implantation induced damage in silicon carbide studied by non-Rutherford elastic backscattering

Author

Szilágyi, E. ; Kótai, E. ; Khánh, N.Q. ; Zolnai, Z. ; Battistig, G. ; Lohner, T. ; Gyulai, J.

Author_Institution

Res. Inst. of Particle & Nucl. Phys., Budapest, Hungary

fYear

2000

fDate

2000

Firstpage

131

Lastpage

134

Abstract

Non-Rutherford elastic scattering is a suitable method to obtain concentrations of low atomic number constituents which are difficult to determine when the scattering cross section is Rutherford type. An enhancement factor of over a hundred for the cross section of ¹²C can be reached using the ¹²C(α,α)¹²C nuclear resonance at 4260 keV. This resonance was utilized to investigate the ion bombardment induced disorder in the carbon sublattice of 4H-SiC. The disorder was created by implantation of 200 keV and 350 keV Al⁺ ions at room temperature

Keywords

aluminium; ion beam effects; ion implantation; nuclear chemical analysis; particle backscattering; silicon compounds; wide band gap semiconductors; 20 C; 200 keV; 350 keV; 4H-SiC; ¹²C; ¹²C(α,α)¹²C nuclear resonance; Al⁺ ions; SiC:Al; atomic number constituents; carbon sublattice; cross section; elastic scattering; enhancement factor; implantation; ion bombardment induced disorder; ion implantation induced damage; nonRutherford elastic backscattering; room temperature; scattering cross section; silicon carbide; Backscatter; Crystallization; Ion beams; Ion implantation; Particle scattering; Resonance; Silicon carbide; Temperature; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924108

Filename

924108