Effect of defects produced by MeV H and He ion implantation on characteristics of power silicon P-i-N diodes

Author

Hazdra, Pavel ; Brand, K. ; Vobecky, Jan

Author_Institution

Dept. of Microelectron., Czech Tech. Univ., Prague, Czech Republic

fYear

2000

fDate

2000

Firstpage

135

Lastpage

138

Abstract

The influence of defects produced by high-energy H⁺ and He²⁺ implantation on characteristics of power P-i-N diodes was investigated and compared. The analysis was performed for three qualitatively different locations of defect maximum in the dose range covering practical applications. Results show that both projectiles provide identical dynamic behavior of implanted diodes while their influence on blocking capability varies with dose and damage peak location. This effect is explained by the different introduction rate of generation centers and shallow thermal donors when hydrogen is replaced by helium

Keywords

deep level transient spectroscopy; helium; hydrogen; ion beam effects; ion implantation; leakage currents; p-i-n diodes; power semiconductor diodes; semiconductor device breakdown; silicon; 1.8 to 12.1 MeV; H ion implantation; He ion implantation; Si:H; Si:He; blocking capability; damage peak location; defect effects; generation centers; high-energy ion implantation; ion dose; power silicon P-i-N diodes; shallow thermal donors; Anodes; Cathodes; Helium; Hydrogen; Ion implantation; Microelectronics; P-i-n diodes; Projectiles; Silicon; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924109

Filename

924109