Novel aspects of the atomic transport of B implanted in silicon at energies below 1 keV

Author

Privitera, V. ; Napolitani, E. ; Priolo, F. ; Moffatt, S. ; Rimini, E.

Author_Institution

Istituto di Metodologie e Tecnologie per la Microelettronica, CNR, Catania, Italy

fYear

2000

fDate

2000

Firstpage

163

Lastpage

166

Abstract

The non equilibrium diffusion of ultra-low energy B ions implanted into Si is characterized by an ultra-fast process, occurring during the ramp-up of the thermal process and by a transient enhancement of the diffusion with an activation energy of 1.7 eV. We have also investigated the location of the defects causing the transient enhanced diffusion. The fast and ultrafast processes are found to be generated by defects located at different depths. The defects responsible for the fast tail shift are located closer to the surface than the defects leading to the ultrafast tail shift

Keywords

annealing; boron; diffusion; doping profiles; elemental semiconductors; impurity-defect interactions; interstitials; ion implantation; secondary ion mass spectra; semiconductor doping; silicon; 1 keV; 1.7 eV; B implanted silicon; B ion nonequilibrium diffusion; Si:B; atomic transport; defect depth location; fast tail shift; thermal process ramp up; transient enhanced diffusion; ultra low energy ion implantation; ultra-fast process; ultrafast tail shift; Atomic force microscopy; Etching; Implants; Ion beams; Ion implantation; Mass spectroscopy; Rapid thermal annealing; Rapid thermal processing; Silicon; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924115

Filename

924115