Title :
InGaAsN as absorber in APDs for 1.3 micron wavelength applications
Author :
Ng, J.S. ; Tan, S.L. ; Goh, Y.L. ; Tan, Chee Hing ; David, J.P.R. ; Allam, J. ; Sweeney, S.J. ; Adams, A.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
fDate :
May 31 2010-June 4 2010
Abstract :
Two issues with using InGaAsN as absorber in avalanche photodiodes (APDs) for 1310nm wavelength applications are addressed here. Firstly, we demonstrated InGaAsN p-i-n diodes with stable photoresponse around 1310nm but reverse leakage current density slightly above the acceptable limit of ~0.2mA/cm2 at 150kV/cm. We also investigated whether or not InGaAsN as absorber is compatible with Al0.8Ga0.2As (the proposed avalanche material in our separate-absorption-multiplication APD design) in terms of the relationship between α and β in InGaAsN. Our observations suggest α ~ β in InGaAsN, making it compatible with Al0.8Ga0.2As.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; leakage currents; p-i-n photodiodes; photonic band gap; APD; Al0.8Ga0.2As; InGaAsN; absorber; avalanche photodiodes; p-i-n diodes; reverse leakage current density; stable photoresponse; wavelength 1310 nm; Avalanche photodiodes; Capacitance-voltage characteristics; Dark current; Gallium arsenide; Indium phosphide; Ionization; Leakage current; P-i-n diodes; Photonic band gap; Tunneling;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516060
