Title :
The ion dechanneling mechanism at grazing scattering on the surface atomic steps
Author :
Dzhurakhalov, A.A. ; Kalandarov, B.S. ; Kutliev, U.O. ; Umarov, F.F.
Author_Institution :
Urgench State Univ., Uzbekistan
Abstract :
The dechanneling of ions from the monoatomic steps on the GaP(100) surface as well as the trajectories of these particles have been carefully studied. The energy and angular distributions of the dechanneling ions have been calculated. It was shown that the dechanneling ions form the characteristic peaks in the angular and energy distributions of scattered ions
Keywords :
III-V semiconductors; channelling; gallium compounds; ion-surface impact; surface topography; GaP; GaP(100) surface; angular distributions; energy distributions; grazing scattering; ion dechanneling mechanism; surface atomic steps; Atomic layer deposition; Atomic measurements; Crystallography; Electrons; Energy loss; Kinetic energy; Nuclear electronics; Particle scattering; Solids; Spectroscopy;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924128
