DocumentCode
3113230
Title
Atomistic simulation of ion implantation into different polytypes of SiC
Author
Ster, A. ; Posselt, M. ; Hallén, A. ; Janson, M.
Author_Institution
Res. Inst. for Tech. Phys. & Mater. Sci., Budapest, Hungary
fYear
2000
fDate
2000
Firstpage
220
Lastpage
223
Abstract
A new version of the Crystal-TRIM code allows the calculation of dopant profiles in 3C-, 2H-, 4H- and 6H-SiC. Applications to B+ , N+, Al+, As+, Ga+ implantations into 6H-SiC are presented and compared to experimental data. Simulation results for range profiles in the different polytypes demonstrate the influence of polytypism
Keywords
doping profiles; ion implantation; polymorphism; semiconductor doping; silicon compounds; wide band gap semiconductors; 2H-SiC; 3C-SiC; 4H-SiC; 6H-SiC; Crystal-TRIM code; SiC; SiC:Al; SiC:As; SiC:B; SiC:N; SiCGa; atomistic simulation; dopant profiles; ion implantation; polytypes; polytypism; range profiles; Crystalline materials; Ion beams; Ion implantation; Lattices; Materials science and technology; Nuclear electronics; Physics; Silicon carbide; Solid state circuits; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology, 2000. Conference on
Conference_Location
Alpbach
Print_ISBN
0-7803-6462-7
Type
conf
DOI
10.1109/.2000.924129
Filename
924129
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