Title :
Computer simulation of ion implantation with visual observation of the implantation profiles
Author :
Djurabekova, F.G. ; Pugacheva, T.S. ; Umarov, F.F. ; Yugay, S.V.
Author_Institution :
Inst. of Appl. Phys., Nat. Univ. of Uzbekistan, Tashkent, Uzbekistan
Abstract :
In the present work CASWIN-D-code is described, which allows visually observe of the surface composition change. The code is more convenient for investigation of ion implantation processes due to the possibility for obtaining the visual results for their immediate analysis. The code is very simple in use and universal for wide range of multicomponent materials. We have performed the calculation of B4 C and GaAs implantation with He+, Ar+ and Ba + ions by means of CASWIN-D-code. The correctness of program and adequacy of used calculation model is confirmed by comparison with experiment that shows the good agreement
Keywords :
III-V semiconductors; boron compounds; doping profiles; gallium arsenide; ion implantation; physics computing; semiconductor doping; surface composition; Ar+ ions; B4C; B4C implantation; B4C:He; Ba+ ions; CASWIN-D-code; GaAs; GaAs implantation; GaAs:Ar; GaAs:Ba; He+ ions; calculation model; computer simulation; implantation profiles; ion implantation; multicomponent materials; surface composition change; Atomic layer deposition; Capacitive sensors; Computer simulation; Energy loss; Gallium arsenide; Ion implantation; Physics; Slabs; Solid modeling; Sputtering;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924131
