All-optical switch using InAs quantum dots in a vertical cavity

Author

Jin, C.Y. ; Kojima, O. ; Inoue, T. ; Ohta, S. ; Kita, T. ; Wada, O. ; Hopkinson, M. ; Akahane, K.

Author_Institution

Div. of Frontier Res. & Technol., Kobe Univ., Kobe, Japan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

We have investigated at the first time an all-optical switch using self-assembled InAs/GaAs quantum dots (QDs) within a vertical cavity structure. The optical nonlinearity of the QD switch has been optimized by an asymmetric cavity to achieve the maximum differential reflectivity. Optical switching via QD excited states exhibits a fast decay with a time constant down to 23 ps and a wavelength tunability over 30 nm. By compared to the theoretical design, the absorption strength of QD layers within the cavity has been determined.

Keywords

III-V semiconductors; excited states; gallium arsenide; high-speed optical techniques; indium compounds; optical switches; quantum dots; self-assembly; InAs-GaAs; all optical switch; excited states; optical nonlinearity; self-assembled quantum dots; vertical cavity structure; Absorption; Communication switching; High speed optical techniques; Nonlinear optics; Optical interferometry; Optical sensors; Optical switches; Quantum dots; Reflectivity; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516072

Filename

5516072